Sign In | Join Free | My infospaceinc.com
China HongKong Wei Ya Hua Electronic Technology Co.,Limited logo
HongKong Wei Ya Hua Electronic Technology Co.,Limited
HongKong Wei Ya Hua Electronic Technology Co.,Limited.
Verified Supplier

3 Years

Home > IGBT Transistor Module >

IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264

HongKong Wei Ya Hua Electronic Technology Co.,Limited
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264

Brand Name : IXYS

Model Number : IXYK110N120A4

MOQ : 50pcs

Price : Negotiable

Supply Ability : 1000000pcs

Voltage - Collector Emitter Breakdown (Max) : 1200 V

Current - Collector (Ic) (Max) : 375 A

Current - Collector Pulsed (Icm) : 900 A

Vce(on) (Max) @ Vge, Ic : 1.8V @ 15V, 110A

Power - Max : 1360 W

Switching Energy : 2.5mJ (on), 8.4mJ (off)

Contact Now

IXYK110N120A4 IGBT PT 1200 V 375 A 1360 W Through Hole TO-264 (IXYK)

IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs

IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The devices exhibit exceptional ruggedness during switching and under short-circuit conditions.

These through-hole IGBTs also offer square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 1200V, making them ideal for snubber-less hard-switching applications. The ultra low-Vsat IGBT provides up to 5kHz switching. The IXYS XPT 4th Generation Trench IGBTs include a positive collector-to-emitter voltage temperature coefficient. This allows designers to use multiple devices in parallel to meet high current requirements and low gate charges, which help reduce gate drive requirements and switching losses.

Typical applications include battery chargers, lamp ballasts, motor drives, power inverters, Power Factor Correction (PFC) circuits, switch-mode power supplies, Uninterruptible Power Supplies (UPS), and welding machines.

FEATURES

  • Developed using proprietory XPT thin-wafer technology and state-of-the-art 4th generation (GenX4™) trench IGBT process
  • Low on-state voltages - VCE(sat)
  • Up to 5kHz switching
  • Positive thermal coefficient of VCE(sat)
  • Optimized for high-speed switching (up to 60kHz)
  • Short circuit capability (10µs)
  • Square RBSOA
  • Ultra-fast anti-parallel diodes (Sonic-FRD™)
  • Hard-switching capabilities
  • High power densities
  • Temperature stability of diode forward voltage VF
  • Low gate drive requirements
  • International standard packages

APPLICATIONS

  • Battery chargers
  • Lamp ballasts
  • Motor drives
  • Power inverters
  • PFC circuits
  • Switch-mode power supplies
  • UPS
  • Welding machines

SPECIFICATIONS

  • Common
    • 1200V VCES
    • 20A IC110
  • IXYA20N120A4HV
    • ≤1.9V VCE(sat)
    • 160ns tfi(typ)
  • IXYA20N120B4HV
    • ≤2.1V VCE(sat)
    • 90ns tfi(typ)
  • IXYA20N120C4HV
    • ≤2.5V VCE(sat)
    • 58ns tfi(typ)

Product Tags:

IGBT Power Transistor 1200V

      

IGBT Power Transistor 375A

      

IXYK110N120A4 IGBT

      
Quality IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264 for sale

IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264 Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: HongKong Wei Ya Hua Electronic Technology Co.,Limited
*Subject:
*Message:
Characters Remaining: (0/3000)